PART |
Description |
Maker |
IRHE9230 IRHE93230 2048 |
200V, P-Channel Surface Mount Radiation Hardened Power MOSFET(200V,P沟道表贴型抗辐射功率MOS场效应管) 00V,P通道表面安装抗辐射功率MOSFET00V的电压,P沟道表贴型抗辐射功率马鞍山场效应管) From old datasheet system RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
|
International Rectifier, Corp.
|
IRHY7230CM IRHY3230CM IRHY8230CM IRHY4230CM JANSF2 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package 200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package
|
IRF[International Rectifier]
|
IRHY597230CM IRHY593230CM IRHY59230CM IRHY597230CM |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 8 A, 200 V, 0.515 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA Simple Drive Requirements
|
IRF[International Rectifier]
|
IRHF593230 IRHF597230 |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
|
International Rectifier
|
FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
IRF9240 IRF9240-15 |
Simple Drive Requirements TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.5ohm, Id=-11A) HEXFET?TRANSISTORS 200V, P-CHANNEL 11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
IRF[International Rectifier]
|
IRHNJ57230SE JANSR2N7486U3 IRHNJ57230SEPBF IRHNJ57 |
12 A, 200 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package Simple Drive Requirements
|
IRF[International Rectifier]
|
IRFS250 IRFS250B IRFS250BFP001 |
200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A 200V N-Channel MOSFET
|
Fairchild Semiconductor
|
IRF620B IRF620BFP001 IRFS620BFP001 |
200V N-Channel B-FET / Substitute of IRFS620 & IRFS620A 200V N-Channel B-FET / Substitute of IRF620 & IRF620A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FQA19N20C |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|